DiodesZetex DMN2058U Type N-Channel MOSFET, 4.6 A, 20 V Enhancement, 3-Pin SOT-23 DMN2058UW-7
- RS Stock No.:
- 182-7125
- Mfr. Part No.:
- DMN2058UW-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 100 units)*
Kr.118 90
(exc. VAT)
Kr.148 60
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | Kr. 1,189 | Kr. 118,90 |
| 200 - 400 | Kr. 1,04 | Kr. 104,00 |
| 500 - 900 | Kr. 0,829 | Kr. 82,90 |
| 1000 - 1900 | Kr. 0,755 | Kr. 75,50 |
| 2000 + | Kr. 0,694 | Kr. 69,40 |
*price indicative
- RS Stock No.:
- 182-7125
- Mfr. Part No.:
- DMN2058UW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMN2058U | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 91mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 1.13W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMN2058U | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 91mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 1.13W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Motor Control
Power Management Functions
Backlighting
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