ROHM RS1E130GN N-Channel MOSFET, 35 A, 30 V, 8-Pin HSOP8 RS1E130GNTB

Unavailable
RS will no longer stock this product.
RS Stock No.:
183-5132
Mfr. Part No.:
RS1E130GNTB
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Series

RS1E130GN

Package Type

HSOP8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

22 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5.8mm

Typical Gate Charge @ Vgs

7.9 nC @ 10 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

COO (Country of Origin):
TH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on - resistance
High Power Package (HSOP8)
Pb-free lead plating
Halogen Free

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