ROHM RUF025N02 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-323 RUF025N02TL
- RS Stock No.:
- 183-5622
- Mfr. Part No.:
- RUF025N02TL
- Brand:
- ROHM
Bulk discount available
Subtotal (1 pack of 30 units)*
Kr.112 23
(exc. VAT)
Kr.140 28
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 18. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 120 | Kr. 3,741 | Kr. 112,23 |
| 150 - 570 | Kr. 2,315 | Kr. 69,45 |
| 600 - 1470 | Kr. 2,25 | Kr. 67,50 |
| 1500 + | Kr. 2,196 | Kr. 65,88 |
*price indicative
- RS Stock No.:
- 183-5622
- Mfr. Part No.:
- RUF025N02TL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-323 | |
| Series | RUF025N02 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 800mW | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.82mm | |
| Length | 2.1mm | |
| Standards/Approvals | No | |
| Width | 1.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-323 | ||
Series RUF025N02 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 800mW | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.82mm | ||
Length 2.1mm | ||
Standards/Approvals No | ||
Width 1.8 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low voltage(1.5V) drive type
Nch Small-signal MOSFET
Small Surface Mount Package
Pb Free
Related links
- ROHM RUF025N02 N-Channel MOSFET 20 V, 3-Pin SOT-323 RUF025N02TL
- ROHM N-Channel MOSFET 20 V, 3-Pin TUMT RUF025N02TL
- Diodes Inc P-Channel MOSFET 20 V, 3-Pin SOT-323 DMP2165UW-7
- Infineon OptiMOS™ 2 N-Channel MOSFET 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1
- ROHM P-Channel MOSFET 20 V, 3-Pin SOT-346T RTR025P02HZGTL
- ROHM RUF N-Channel MOSFET 20 V, 3-Pin TUMT3 RUF025N02FRATL
- ROHM N-Channel MOSFET 30 V, 3-Pin SOT-346T RTR025N03HZGTL
- ROHM N-Channel MOSFET 45 V, 3-Pin SOT-346T RSR025N05HZGTL