onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN FDMA2002NZ

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Subtotal (1 pack of 20 units)*

Kr.44 88 

(exc. VAT)

Kr.56 10 

(inc. VAT)

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20 +Kr. 2,244Kr. 44,88

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Packaging Options:
RS Stock No.:
184-5019
Mfr. Part No.:
FDMA2002NZ
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

WDFN

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

268mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.5W

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2.4nC

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

2mm

Standards/Approvals

No

Width

2 mm

Height

0.75mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
TH
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

2.9 A, 30 V

RDS(ON) = 123 mΩ @ VGS = 4.5 V

RDS(ON) = 140 mΩ @ VGS = 3.0 V

RDS(ON) = 163 mΩ @ VGS = 2.5 V

Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

HBM ESD protection level=1.8kV (Note 3)

Free from halogenated compounds and antimony oxides

Applications

This product is general usage and suitable for many different applications

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