onsemi NVMJS1D3N04C N-Channel MOSFET, 235 A, 40 V Enhancement, 8-Pin LFPAK NVMJS1D3N04CTWG
- RS Stock No.:
- 185-9186
- Mfr. Part No.:
- NVMJS1D3N04CTWG
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 4 units)*
Kr. 130,64
(exc. VAT)
Kr. 163,28
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Last RS stock
- Final 1 740 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 36 | Kr. 32,66 | Kr. 130,64 |
| 40 - 396 | Kr. 28,17 | Kr. 112,68 |
| 400 - 1996 | Kr. 24,425 | Kr. 97,70 |
| 2000 + | Kr. 21,478 | Kr. 85,91 |
*price indicative
- RS Stock No.:
- 185-9186
- Mfr. Part No.:
- NVMJS1D3N04CTWG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 235A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMJS1D3N04C | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 128W | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Length | 5mm | |
| Width | 4.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 235A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMJS1D3N04C | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 128W | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Length 5mm | ||
Width 4.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Non Compliant with RoHS
- COO (Country of Origin):
- PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free
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