onsemi NVMTS0D4N04CL N-Channel MOSFET, 553.8 A, 40 V Enhancement, 8-Pin DFN NVMTS0D4N04CLTXG
- RS Stock No.:
- 186-1334
- Mfr. Part No.:
- NVMTS0D4N04CLTXG
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
Kr. 261,98
(exc. VAT)
Kr. 327,48
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 2 432 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 130,99 | Kr. 261,98 |
| 20 - 198 | Kr. 112,855 | Kr. 225,71 |
| 200 + | Kr. 97,81 | Kr. 195,62 |
*price indicative
- RS Stock No.:
- 186-1334
- Mfr. Part No.:
- NVMTS0D4N04CLTXG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 553.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMTS0D4N04CL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 640μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 163nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 244W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Width | 8mm | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 553.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMTS0D4N04CL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 640μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 163nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 244W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Width 8mm | ||
Height 1.15mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant with RoHS
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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