STMicroelectronics Type N-Channel MOSFET, 7.5 A, 60 V Enhancement, 8-Pin SO-8 STS7NF60L
- RS Stock No.:
- 188-8543
- Mfr. Part No.:
- STS7NF60L
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.174 35
(exc. VAT)
Kr.217 94
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 7 280 unit(s) shipping from 20. januar 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 17,435 | Kr. 174,35 |
| 50 - 90 | Kr. 16,565 | Kr. 165,65 |
| 100 - 240 | Kr. 14,895 | Kr. 148,95 |
| 250 - 490 | Kr. 13,385 | Kr. 133,85 |
| 500 + | Kr. 12,767 | Kr. 127,67 |
*price indicative
- RS Stock No.:
- 188-8543
- Mfr. Part No.:
- STS7NF60L
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.65mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.65mm | ||
Length 5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
TYPICAL RDS(on) = 0.017 Ω
LOW THRESHOLD DRIVE
STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
APPLICATIONS
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGEMENT INOMADIC EQUIPMENT
POWER MANAGEMENT IPORTABLE/DESKTOP Pcs
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