onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F

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Subtotal (1 pack of 10 units)*

Kr.175 12 

(exc. VAT)

Kr.218 90 

(inc. VAT)

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10 +Kr. 17,512Kr. 175,12

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Packaging Options:
RS Stock No.:
195-2518
Mfr. Part No.:
NVB150N65S3F
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

192W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

43nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.65 mm

Length

10.67mm

Height

4.58mm

Automotive Standard

AEC-Q101

SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

701 V @ TJ = 150°C

Typ. RDS(on) = 114 m

Ultra Low Gate Charge (Typ. Qg = 43 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 385 pF)

These Devices are Pb−Free

Applications

Automotive On Board Charger

Automotive DC/DC Converter for HEV

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