Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	72A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	36mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Height	21.1mm
	Length	15.9mm
	Width	5.1 mm
	Number of Elements per Chip	1

	Select all
	Brand STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 72A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 36mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Height 21.1mm
	Length 15.9mm
	Width 5.1 mm
	Number of Elements per Chip 1

Datasheet STWA75N60DM6

COO (Country of Origin):: CN

These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) * area with one of the most effective switching behaviors available in the market for the most demanding high efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics Single 1 Type N-Channel MOSFET, 72 A, 600 V Enhancement, 3-Pin TO-247 STWA75N60DM6

Related links