STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V Depletion, 3-Pin TO-247
- RS Stock No.:
- 202-5546
- Mfr. Part No.:
- STW70N65DM6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.3 327 66
(exc. VAT)
Kr.4 159 56
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 420 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | Kr. 110,922 | Kr. 3 327,66 |
| 120 - 240 | Kr. 107,929 | Kr. 3 237,87 |
| 270 - 570 | Kr. 105,042 | Kr. 3 151,26 |
| 600 - 1170 | Kr. 102,384 | Kr. 3 071,52 |
| 1200 + | Kr. 99,829 | Kr. 2 994,87 |
*price indicative
- RS Stock No.:
- 202-5546
- Mfr. Part No.:
- STW70N65DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | ST | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 450W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Height | 41.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series ST | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 450W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Height 41.2mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
100% avalanche tested
Zener-protected
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