DiodesZetex Dual DMG1023 1 Type P-Channel MOSFET, 1.03 A, 20 V Enhancement, 6-Pin SOT-563 DMG1023UVQ-7
- RS Stock No.:
- 206-0066
- Mfr. Part No.:
- DMG1023UVQ-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 3000 units)*
Kr.2 589 00
(exc. VAT)
Kr.3 237 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 3 000 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | Kr. 0,863 | Kr. 2 589,00 |
| 9000 - 21000 | Kr. 0,841 | Kr. 2 523,00 |
| 24000 - 42000 | Kr. 0,819 | Kr. 2 457,00 |
| 45000 + | Kr. 0,799 | Kr. 2 397,00 |
*price indicative
- RS Stock No.:
- 206-0066
- Mfr. Part No.:
- DMG1023UVQ-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.03A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMG1023 | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 622.4nC | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Power Dissipation Pd | 530W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.6mm | |
| Width | 1.2 mm | |
| Length | 1.6mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.03A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMG1023 | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 622.4nC | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Power Dissipation Pd 530W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.6mm | ||
Width 1.2 mm | ||
Length 1.6mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 20V complementary pair enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 6 V with 0.53W thermal power dissipation.
Low input capacitance
Fast switching speed
Related links
- DiodesZetex Dual DMG1023 1 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-563
- DiodesZetex Dual DMC2710 2 Type P 800 mA 6-Pin SOT-563
- DiodesZetex Dual DMC2710 2 Type P 800 mA 6-Pin SOT-563 DMC2710UV-7
- DiodesZetex Dual DMP31 1 Type P-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 DMP31D7LDW-7
- DiodesZetex Dual DMP31 1 Type P-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- onsemi NTZS3151P Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-563
- onsemi Isolated 2 Type P-Channel Small Signal 20 V Enhancement, 6-Pin SOT-563
- DiodesZetex Isolated 2 Type N 700 mA 6-Pin SOT-563