Toshiba TK099V65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN TK099V65Z,LQ(S

Subtotal (1 pack of 2 units)*

Kr.125 84 

(exc. VAT)

Kr.157 30 

(inc. VAT)

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Units
Per unit
Per Pack*
2 +Kr. 62,92Kr. 125,84

*price indicative

Packaging Options:
RS Stock No.:
206-9730
Mfr. Part No.:
TK099V65Z,LQ(S
Brand:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Series

TK099V65Z

Package Type

DFN

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Maximum Power Dissipation Pd

230W

Typical Gate Charge Qg @ Vgs

47nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

8mm

Standards/Approvals

No

Height

0.5mm

Width

8 mm

Automotive Standard

No

The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.

Low drain-source on-resistance 0.08 ?

Storage temperature -55 to 150°C

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