Vishay SQJ140EP Type N-Channel MOSFET, 266 A, 40 V Enhancement, 4-Pin SO-8 SQJ140EP-T1_GE3
- RS Stock No.:
- 210-5031
- Mfr. Part No.:
- SQJ140EP-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr. 136,59
(exc. VAT)
Kr. 170,74
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 02 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 13,659 | Kr. 136,59 |
| 100 - 240 | Kr. 12,996 | Kr. 129,96 |
| 250 - 490 | Kr. 10,914 | Kr. 109,14 |
| 500 - 990 | Kr. 9,564 | Kr. 95,64 |
| 1000 + | Kr. 7,493 | Kr. 74,93 |
*price indicative
- RS Stock No.:
- 210-5031
- Mfr. Part No.:
- SQJ140EP-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 266A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJ140EP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 88W | |
| Typical Gate Charge Qg @ Vgs | 49.2nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 266A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJ140EP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 88W | ||
Typical Gate Charge Qg @ Vgs 49.2nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK SO-8L package type with 266 A drain current.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching characteristics
Related links
- Vishay SQJ140EP Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ140E-T1_GE3
- Vishay SQJB46ELP_RC Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJB46ELP-T1_GE3
- Vishay SQJB46EP_RC Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJB46EP-T1_GE3
- Vishay SQJQ148E Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ148E-T1_GE3
- Vishay Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJ184EP-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ136ELP-T1_GE3
- Vishay Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK SO-8L SQJ154EP-T1_GE3