DiodesZetex DMN3060LWQ Type N-Channel MOSFET, 2.6 A, 30 V Enhancement, 3-Pin SOT-323 DMN3060LWQ-7
- RS Stock No.:
- 213-9178
- Mfr. Part No.:
- DMN3060LWQ-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr.124 45
(exc. VAT)
Kr.155 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 5 600 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | Kr. 2,489 | Kr. 124,45 |
| 100 - 200 | Kr. 2,176 | Kr. 108,80 |
| 250 - 450 | Kr. 2,137 | Kr. 106,85 |
| 500 - 950 | Kr. 1,938 | Kr. 96,90 |
| 1000 + | Kr. 1,741 | Kr. 87,05 |
*price indicative
- RS Stock No.:
- 213-9178
- Mfr. Part No.:
- DMN3060LWQ-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN3060LWQ | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 5.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.64W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35 mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN3060LWQ | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 5.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.64W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.35 mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMN3060LWQ series is N-channel MOSFET. It is used in general purpose interfacing switch, power management functions and analogue switch.
Low input capacitance
Fast switching speed
Related links
- Diodes Inc DMN3060LWQ N-Channel MOSFET 30 V, 3-Pin SOT-323 DMN3060LWQ-7
- Diodes Inc N-Channel MOSFET 30 V, 3-Pin SOT-323 DMN3067LW-7
- Diodes Inc DMN3060LW N-Channel MOSFET 30 V, 3-Pin SOT-323 DMN3060LW-7
- Vishay N-Channel MOSFET 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin SOT-223 IRFL4315TRPBF
- Vishay N-Channel MOSFET 20 V, 3-Pin SOT-23 SI2302CDS-T1-E3
- Microchip TN0104 Silicon N-Channel MOSFET 40 V, 3-Pin SOT-89 TN0104N8-G
- Infineon SIPMOS® N-Channel MOSFET 60 V, 3-Pin SOT-223 BSP318SH6327XTSA1