Infineon OptiMOS 5 Type N-Channel MOSFET, 49 A, 80 V N, 8-Pin SuperSO BSC117N08NS5ATMA1
- RS Stock No.:
- 214-4328
- Mfr. Part No.:
- BSC117N08NS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
Kr.177 69
(exc. VAT)
Kr.222 12
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 13 605 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | Kr. 11,846 | Kr. 177,69 |
| 75 - 135 | Kr. 11,257 | Kr. 168,86 |
| 150 - 360 | Kr. 10,784 | Kr. 161,76 |
| 375 - 735 | Kr. 10,311 | Kr. 154,67 |
| 750 + | Kr. 9,602 | Kr. 144,03 |
*price indicative
- RS Stock No.:
- 214-4328
- Mfr. Part No.:
- BSC117N08NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.7mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.7mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
It is ideal for hot-swap and e-fuse applications
Related links
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