Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-252 IPD70R900P7SAUMA1

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Subtotal (1 pack of 50 units)*

Kr.203 70 

(exc. VAT)

Kr.254 60 

(inc. VAT)

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Per Pack*
50 +Kr. 4,074Kr. 203,70

*price indicative

Packaging Options:
RS Stock No.:
214-4394
Mfr. Part No.:
IPD70R900P7SAUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Series

700V CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Power Dissipation Pd

30.5W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.65mm

Width

6.42 mm

Height

2.35mm

Automotive Standard

No

The Infineon 700V Cool MOS P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains.

It supports less magnetic size with lower BOM costs

It has high ESD ruggedness

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