Infineon 800V CoolMOS P7 N-Channel MOSFET, 17 A, 800 V Enhancement, 3-Pin TO-220 IPP80R280P7XKSA1
- RS Stock No.:
- 214-4420
- Mfr. Part No.:
- IPP80R280P7XKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 197,23
(exc. VAT)
Kr. 246,54
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Last RS stock
- Final 430 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 39,446 | Kr. 197,23 |
| 25 - 45 | Kr. 35,532 | Kr. 177,66 |
| 50 - 120 | Kr. 33,176 | Kr. 165,88 |
| 125 - 245 | Kr. 31,186 | Kr. 155,93 |
| 250 + | Kr. 28,828 | Kr. 144,14 |
*price indicative
- RS Stock No.:
- 214-4420
- Mfr. Part No.:
- IPP80R280P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | 800V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 101W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Width | 15.93mm | |
| Height | 4.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series 800V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 101W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Width 15.93mm | ||
Height 4.4mm | ||
Automotive Standard No | ||
This Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
It has fully optimised portfolio
It has lower assembly cost
Related links
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- Infineon 800V CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon 800V CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
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