Infineon HEXFET Type N-Channel MOSFET, 87 A, 30 V, 3-Pin TO-263 IRF3709ZSTRRPBF

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Subtotal (1 pack of 10 units)*

Kr.188 91 

(exc. VAT)

Kr.236 14 

(inc. VAT)

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Last RS stock
  • Final 300 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 40Kr. 18,891Kr. 188,91
50 - 90Kr. 17,946Kr. 179,46
100 - 240Kr. 17,191Kr. 171,91
250 - 490Kr. 16,435Kr. 164,35
500 +Kr. 15,302Kr. 153,02

*price indicative

Packaging Options:
RS Stock No.:
214-4451
Mfr. Part No.:
IRF3709ZSTRRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

87A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.8mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Power Dissipation Pd

79W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness

It has product qualification according to JEDEC standard

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