Infineon CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 IPA60R280P7XKSA1

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Subtotal (1 pack of 10 units)*

Kr.202 32 

(exc. VAT)

Kr.252 90 

(inc. VAT)

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Per Pack*
10 - 40Kr. 20,232Kr. 202,32
50 - 90Kr. 19,219Kr. 192,19
100 - 240Kr. 18,418Kr. 184,18
250 - 490Kr. 17,595Kr. 175,95
500 +Kr. 16,394Kr. 163,94

*price indicative

Packaging Options:
RS Stock No.:
214-9000
Mfr. Part No.:
IPA60R280P7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS P7

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Excellent ESD robustness >2kV (HBM) for all products

Suitable for hard and soft switching due to an outstanding commutation ruggedness

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