Infineon CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-220 IPA70R360P7SXKSA1

RS Stock No.:: 214-9005
Mfr. Part No.:: IPA70R360P7SXKSA1
Brand:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-220 IPA70R360P7SXKSA1

Subtotal (1 tube of 50 units)*

Kr. 325,95

(exc. VAT)

Kr. 407,45

(inc. VAT)

FREE delivery for online orders over 750,00 kr

In Stock

Plus 2 600 unit(s) shipping from 28 September 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 +	Kr. 6,519	Kr. 325,95

*price indicative

RS Stock No.:: 214-9005
Mfr. Part No.:: IPA70R360P7SXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	12.5A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS P7
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	26.5W
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	+150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 12.5A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS P7
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 26.5W
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature +150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA70R360P7SXKSA1

Infineon CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 12.5A Maximum Continuous Drain Current - IPA70R360P7SXKSA1

This MOSFET is a high-voltage, N-channel enhancement transistor designed for power switching in industrial and power-conversion environments. It operates across a wide ambient temperature range and is supplied in a through-hole TO-220 package for straightforward board mounting and heat-sinking in discrete power assemblies.

Features and Benefits:

• 700V drain capability enables high-voltage switching applications
• 12.5A continuous current supports substantial load currents
• 360mΩ Rds minimises conduction losses at rated conditions
• 26.5W power dissipation allows sustained thermal loading
• 0.9V forward voltage reduces voltage drop in conduction
• 30V gate tolerance permits common gate-drive voltages

Applications

• Suitable for SMPS primary-side switching in high-voltage supplies
• Ideal for industrial power converters requiring 700V devices
• Used for discrete switch stages in high-voltage assemblies
• Can be used for through-hole prototyping and repair
• Suitable for systems operating across wide temperature ranges

What is the allowable gate drive magnitude?

The device accepts up to 30V between gate and source as its maximum gate limit.

How does the package assist thermal management?

The TO-220 through-hole format permits direct attachment to heat-sinks and ease of mounting for improved heat dissipation.

What temperature extremes can it tolerate in operation?

It is rated for operation from -40°C up to +150°C ambient conditions.

What conduction characteristic affects power loss during on-state?

The on-resistance of 360mΩ directly influences conduction losses when carrying current.

Which parameter indicates continuous load capability?

The continuous drain current rating of 12.5A defines its steady-state current handling.