Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 30 A, 60 V Enhancement, 8-Pin PDFN56

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Subtotal (1 reel of 2500 units)*

Kr.24 325 00 

(exc. VAT)

Kr.30 400 00 

(inc. VAT)

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Being discontinued
  • Final 5 000 unit(s), ready to ship
Units
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Per Reel*
2500 +Kr. 9,73Kr. 24 325,00

*price indicative

RS Stock No.:
216-9705
Mfr. Part No.:
TSM250NB06DCR
Brand:
Taiwan Semiconductor
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Brand

Taiwan Semiconductor

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

60V

Series

TSM025

Package Type

PDFN56

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

25mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

48W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.1mm

Length

6.1mm

Width

5.1 mm

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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