Infineon IPL Type N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK

View all MOSFETs

Subtotal (1 reel of 3000 units)*

Kr.45 390 00 

(exc. VAT)

Kr.56 730 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04. januar 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +Kr. 15,13Kr. 45 390,00

*price indicative

RS Stock No.:
217-2537
Mfr. Part No.:
IPL60R125P7AUMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

600V

Series

IPL

Package Type

ThinPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

111W

Typical Gate Charge Qg @ Vgs

36nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

8.8 mm

Standards/Approvals

No

Length

8.8mm

Height

1.1mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Suitable for hard and soft switching(PFC and LLC)due to an outstanding  commutation ruggedness

Significant reduction of switching and conduction losses

Excellent ESD robustness > 2kV (HBM) for all products

Better RDS(on)/package products compared to competition enabled by a

low RDS(on)*A(below1Ohm*mm²)

Fully qualified acc. JEDEC for Industrial Applications

Related links