Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL

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Subtotal (1 pack of 5 units)*

Kr.334 17 

(exc. VAT)

Kr.417 71 

(inc. VAT)

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  • 100 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
5 - 5Kr. 66,834Kr. 334,17
10 - 20Kr. 57,474Kr. 287,37
25 - 45Kr. 53,47Kr. 267,35
50 - 120Kr. 50,13Kr. 250,65
125 +Kr. 46,126Kr. 230,63

*price indicative

Packaging Options:
RS Stock No.:
218-2972
Mfr. Part No.:
AUIRF5210STRL
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.6V

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.1W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.67mm

Height

4.83mm

Width

9.65 mm

Automotive Standard

AEC-Q101

The Infineon P-channel automotive MOSFET. It is specifically designed for automotive applications. This cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Process Technology

P-Channel MOSFET

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

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