Infineon OptiMOS 3 Type N-Channel MOSFET, 73 A, 80 V N, 3-Pin TO-252 IPD096N08N3GATMA1
- RS Stock No.:
- 218-3038
- Mfr. Part No.:
- IPD096N08N3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
Kr.146 895
(exc. VAT)
Kr.183 615
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 19. mai 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | Kr. 9,793 | Kr. 146,90 |
| 75 - 135 | Kr. 9,297 | Kr. 139,46 |
| 150 - 360 | Kr. 8,915 | Kr. 133,73 |
| 375 - 735 | Kr. 8,519 | Kr. 127,79 |
| 750 + | Kr. 7,932 | Kr. 118,98 |
*price indicative
- RS Stock No.:
- 218-3038
- Mfr. Part No.:
- IPD096N08N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.6mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.6mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon N-Channel Power MOSFET. This MOSFET is ideal for high frequency switching applications.
Optimized technology for DC/DC converters
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
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