Infineon HEXFET Type N-Channel MOSFET, 62 A, 55 V, 3-Pin TO-252
- RS Stock No.:
- 218-3112
- Mfr. Part No.:
- IRFR48ZTRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
Kr.20 700 00
(exc. VAT)
Kr.25 860 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 6,90 | Kr. 20 700,00 |
*price indicative
- RS Stock No.:
- 218-3112
- Mfr. Part No.:
- IRFR48ZTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Maximum Power Dissipation Pd | 91W | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Maximum Power Dissipation Pd 91W | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-Channel power MOSFET. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Lead free
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