Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1

RS Stock No.:: 219-6005
Mfr. Part No.:: IPN95R1K2P7ATMA1
Brand:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1

Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.110 28

(exc. VAT)

Kr.137 85

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 2 870 unit(s) shipping from 29. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 40	Kr. 11,028	Kr. 110,28
50 - 90	Kr. 10,479	Kr. 104,79
100 - 240	Kr. 10,033	Kr. 100,33
250 - 490	Kr. 9,598	Kr. 95,98
500 +	Kr. 8,923	Kr. 89,23

*price indicative

RS Stock No.:: 219-6005
Mfr. Part No.:: IPN95R1K2P7ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	950V
	Series	CoolMOS P7
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Power Dissipation Pd	7W
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Width	3.7 mm
	Height	1.8mm
	Length	6.7mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 950V
	Series CoolMOS P7
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Power Dissipation Pd 7W
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Width 3.7 mm
	Height 1.8mm
	Length 6.7mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPN95R1K2P7ATMA1

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1

FREE delivery for online orders over 500,00 kr

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