Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 90 A, 40 V Enhancement, 8-Pin TDSON IPC90N04S53R6ATMA1

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Subtotal (1 pack of 15 units)*

Kr.46 425 

(exc. VAT)

Kr.58 035 

(inc. VAT)

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15 +Kr. 3,095Kr. 46,43

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Packaging Options:
RS Stock No.:
220-7402
Mfr. Part No.:
IPC90N04S53R6ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS 5

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24.5nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

63W

Maximum Operating Temperature

175°C

Length

5.25mm

Width

5.58 mm

Standards/Approvals

No

Height

1.1mm

Automotive Standard

AEC-Q101

The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.

OptiMOS™ - power MOSFET for automotive applications

N-channel - Enhancement mode - Logic Level

MSL1 up to 260°C peak reflow

175°C operating temperature

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