Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON IPL60R095CFD7AUMA1

RS Stock No.:: 220-7431
Mfr. Part No.:: IPL60R095CFD7AUMA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON IPL60R095CFD7AUMA1

Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.98 74

(exc. VAT)

Kr.123 42

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Pack*
2 - 8	Kr. 49,37	Kr. 98,74
10 - 18	Kr. 39,925	Kr. 79,85
20 - 48	Kr. 37,525	Kr. 75,05
50 - 98	Kr. 35,065	Kr. 70,13
100 +	Kr. 32,605	Kr. 65,21

*price indicative

RS Stock No.:: 220-7431
Mfr. Part No.:: IPL60R095CFD7AUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	97A
	Maximum Drain Source Voltage Vds	650V
	Package Type	VSON
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	147W
	Typical Gate Charge Qg @ Vgs	51nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Length	8.1mm
	Standards/Approvals	No
	Width	8.1 mm
	Height	1.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 97A
	Maximum Drain Source Voltage Vds 650V
	Package Type VSON
	Series CoolMOS
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 147W
	Typical Gate Charge Qg @ Vgs 51nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Length 8.1mm
	Standards/Approvals No
	Width 8.1 mm
	Height 1.1mm
	Automotive Standard No

Datasheet - IPL60R095CFD7AUMA1

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON IPL60R095CFD7AUMA1

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