onsemi NTP165N65S N-Channel MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 NTP165N65S3H

Subtotal (800 units, in tubes of 800)*

Kr. 17 901,60

(exc. VAT)

Kr. 22 376,80

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04 October 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
800 +Kr. 22,377Kr. 17 901,60

*price indicative

RS Stock No.:
221-6747
Mfr. Part No.:
NTP165N65S3H
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

NTP165N65S

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

165mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

35nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

142W

Maximum Operating Temperature

175°C

Height

16.3mm

Length

10.67mm

Standards/Approvals

RoHS

Width

4.7mm

Automotive Standard

No

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 326 pF

100% avalanche tested

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy