DiodesZetex DMG1012UWQ Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 3-Pin SOT-323

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Subtotal (1 reel of 3000 units)*

Kr.2 205 00 

(exc. VAT)

Kr.2 757 00 

(inc. VAT)

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Units
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Per Reel*
3000 - 6000Kr. 0,735Kr. 2 205,00
9000 +Kr. 0,618Kr. 1 854,00

*price indicative

RS Stock No.:
222-2824
Mfr. Part No.:
DMG1012UWQ-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

950mA

Maximum Drain Source Voltage Vds

20V

Series

DMG1012UWQ

Package Type

SOT-323

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

6 V

Maximum Power Dissipation Pd

0.29W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

2.2mm

Height

1.1mm

Standards/Approvals

No

Width

1.35 mm

Automotive Standard

AEC-Q101

The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

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