DiodesZetex DMP Type P-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin X2-DFN DMP2069UFY4Q-7
- RS Stock No.:
- 222-2854
- Mfr. Part No.:
- DMP2069UFY4Q-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.116 175
(exc. VAT)
Kr.145 225
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 975 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 4,647 | Kr. 116,18 |
| 50 - 75 | Kr. 4,553 | Kr. 113,83 |
| 100 - 225 | Kr. 3,231 | Kr. 80,78 |
| 250 + | Kr. 3,166 | Kr. 79,15 |
*price indicative
- RS Stock No.:
- 222-2854
- Mfr. Part No.:
- DMP2069UFY4Q-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X2-DFN | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Power Dissipation Pd | 0.53W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.4mm | |
| Length | 1.58mm | |
| Width | 2.08 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X2-DFN | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Power Dissipation Pd 0.53W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.4mm | ||
Length 1.58mm | ||
Width 2.08 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex P-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
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