Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1

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Subtotal (1 pack of 15 units)*

Kr.137 625 

(exc. VAT)

Kr.172 035 

(inc. VAT)

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Per Pack*
15 - 60Kr. 9,175Kr. 137,63
75 - 135Kr. 8,709Kr. 130,64
150 - 360Kr. 8,343Kr. 125,15
375 - 735Kr. 7,977Kr. 119,66
750 +Kr. 7,429Kr. 111,44

*price indicative

Packaging Options:
RS Stock No.:
222-4675
Mfr. Part No.:
IPD80R2K8CEATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-252

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.8Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

42W

Maximum Operating Temperature

150°C

Width

6.22 mm

Height

2.41mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

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