Infineon CoolMOS Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin SOT-223

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Subtotal (1 reel of 3000 units)*

Kr.7 545 00 

(exc. VAT)

Kr.9 432 00 

(inc. VAT)

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Units
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Per Reel*
3000 +Kr. 2,515Kr. 7 545,00

*price indicative

RS Stock No.:
222-4688
Mfr. Part No.:
IPN80R2K4P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

800V

Package Type

SOT-223

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

7.5nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

6.3W

Maximum Operating Temperature

150°C

Length

6.7mm

Height

1.8mm

Standards/Approvals

No

Width

3.7 mm

Automotive Standard

No

The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Product validation acc. JEDEC Standard

Low switching losses (Eoss) Integrated ESD protection diode

Excellent thermal behaviour

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