Infineon IMZ1 Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 4-Pin TO-247

Bulk discount available

Subtotal (1 tube of 30 units)*

Kr.3 299 10 

(exc. VAT)

Kr.4 123 80 

(inc. VAT)

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  • Plus 300 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
30 - 30Kr. 109,97Kr. 3 299,10
60 +Kr. 104,472Kr. 3 134,16

*price indicative

RS Stock No.:
222-4862
Mfr. Part No.:
IMZ120R030M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

IMZ1

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

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