Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252

View all MOSFETs

Subtotal (1 reel of 2500 units)*

Kr.9 417 50 

(exc. VAT)

Kr.11 772 50 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 17 500 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +Kr. 3,767Kr. 9 417,50

*price indicative

RS Stock No.:
223-8517
Mfr. Part No.:
IPD50N06S409ATMA2
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.95V

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

71W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS series N-channel MOSFET in DPAK package has drain to source voltage of 60 V. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.

Automotive AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package

•Ultra low Rds

•100% Avalanche tested

Related links