Vishay N-Channel 60 V Type N-Channel MOSFET, 602 A, 60 V, 4-Pin PowerPAK (8x8L) SQJQ160E-T1_GE3
- RS Stock No.:
- 225-9968
- Mfr. Part No.:
- SQJQ160E-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.231 20
(exc. VAT)
Kr.289 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 635 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 46,24 | Kr. 231,20 |
| 50 - 120 | Kr. 41,618 | Kr. 208,09 |
| 125 - 245 | Kr. 36,54 | Kr. 182,70 |
| 250 - 495 | Kr. 33,748 | Kr. 168,74 |
| 500 + | Kr. 24,528 | Kr. 122,64 |
*price indicative
- RS Stock No.:
- 225-9968
- Mfr. Part No.:
- SQJQ160E-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 602A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK (8x8L) | |
| Series | N-Channel 60 V | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 600W | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.7mm | |
| Length | 8.1mm | |
| Width | 8 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 602A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK (8x8L) | ||
Series N-Channel 60 V | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 600W | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.7mm | ||
Length 8.1mm | ||
Width 8 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
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