Vishay E Series Dual N-Channel MOSFET, 15 A, 850 V, 3-Pin TO-247AC SiHG17N80AEF-GE3
- RS Stock No.:
- 228-2865
- Mfr. Part No.:
- SiHG17N80AEF-GE3
- Brand:
- Vishay
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 228-2865
- Mfr. Part No.:
- SiHG17N80AEF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 850 V | |
| Package Type | TO-247AC | |
| Series | E Series | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.305 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 850 V | ||
Package Type TO-247AC | ||
Series E Series | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.305 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Low effective capacitance (Co(er))
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