Vishay TrenchFET Type N-Channel MOSFET, 114 A, 40 V Enhancement, 4-Pin SO-8 SQJ152EP-T1_GE3
- RS Stock No.:
- 228-2957
- Mfr. Part No.:
- SQJ152EP-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.98 84
(exc. VAT)
Kr.123 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 27. juli 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 9,884 | Kr. 98,84 |
| 100 - 240 | Kr. 9,312 | Kr. 93,12 |
| 250 - 490 | Kr. 8,397 | Kr. 83,97 |
| 500 - 990 | Kr. 7,905 | Kr. 79,05 |
| 1000 + | Kr. 7,402 | Kr. 74,02 |
*price indicative
- RS Stock No.:
- 228-2957
- Mfr. Part No.:
- SQJ152EP-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 40 V power MOSFET.
100 % Rg and UIS tested
Related links
- Vishay TrenchFET N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJ152EP-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJ136ELP-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 4-Pin PowerPAK SO-8L SQJ126EP-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 25 V, 4-Pin PowerPAK SO-8L SiJA22DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SIJA74DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 45 V, 4-Pin PowerPAK SO-8L SiJ450DP-T1-GE3
- Vishay Siliconix TrenchFET N-Channel MOSFET 150 V, 4-Pin PowerPAK SO-8L SQJ872EP-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 40 V, 4-Pin PowerPAK 8 x 8L SQJQ140E-T1_GE3