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Vishay TrenchFET Type P-Channel MOSFET, 33.6 A, 100 V Enhancement, 4-Pin SO-8

RS Stock No.:: 228-2958
Mfr. Part No.:: SQJ211ELP-T1_GE3
Brand:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 33.6 A, 100 V Enhancement, 4-Pin SO-8

Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 228-2958
Mfr. Part No.:: SQJ211ELP-T1_GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33.6A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-0.82V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	68W
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33.6A
	Maximum Drain Source Voltage Vds 100V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -0.82V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 68W
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - SQJ211ELP-T1_GE3

The Vishay TrenchFET automotive P-channel is 100 V power MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type P-Channel MOSFET, 33.6 A, 100 V Enhancement, 4-Pin SO-8

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