Infineon IPC Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SuperSO IPC100N04S51R7ATMA1
- RS Stock No.:
- 229-1823
- Mfr. Part No.:
- IPC100N04S51R7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.140 81
(exc. VAT)
Kr.176 01
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 20 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 14,081 | Kr. 140,81 |
| 50 - 90 | Kr. 13,373 | Kr. 133,73 |
| 100 - 240 | Kr. 12,813 | Kr. 128,13 |
| 250 - 490 | Kr. 12,252 | Kr. 122,52 |
| 500 + | Kr. 11,406 | Kr. 114,06 |
*price indicative
- RS Stock No.:
- 229-1823
- Mfr. Part No.:
- IPC100N04S51R7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPC | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 115W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.25mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 5.58 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPC | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 115W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 5.25mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 5.58 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel normal level power MOSFET used for automotive applications. It is 100 percent avalanche tested and AEC Q101 qualified.
It is RoHS compliant
It has 175°C operating temperature
Related links
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IPC100N04S51R7ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 80 V, 8-Pin SuperSO8 5 x 6 IAUC100N08S5N043ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IPC100N04S5L1R9ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IPC100N04S5L2R6ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 80 V, 8-Pin SuperSO8 5 x 6 IAUC70N08S5N074ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 80 V, 8-Pin SuperSO8 5 x 6 BSC072N08NS5ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 80 V, 8-Pin SuperSO8 5 x 6 BSC037N08NS5ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IPC50N04S55R8ATMA1