onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252 NTD360N65S3H

RS Stock No.:: 229-6453
Mfr. Part No.:: NTD360N65S3H
Brand:: onsemi

onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252 NTD360N65S3H

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.141 40

(exc. VAT)

Kr.176 75

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 14 865 unit(s) shipping from 29. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	Kr. 28,28	Kr. 141,40
50 - 95	Kr. 24,39	Kr. 121,95
100 +	Kr. 21,142	Kr. 105,71

*price indicative

RS Stock No.:: 229-6453
Mfr. Part No.:: NTD360N65S3H
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	650V
	Series	SUPERFET III
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	N
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	17.5nC
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	2.39 mm
	Standards/Approvals	No
	Length	6.73mm
	Height	6.22mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 650V
	Series SUPERFET III
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode N
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 17.5nC
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 2.39 mm
	Standards/Approvals No
	Length 6.73mm
	Height 6.22mm
	Automotive Standard No

Datasheet - NTD360N65S3H

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.

Features

• 700 V @ TJ = 150°C

• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)

• Fast switching performance with robust body diode

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on) = 296 m

• Internal Gate Resistance: 0.9

onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252 NTD360N65S3H

FREE delivery for online orders over 500,00 kr

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

Features

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