onsemi SiC Power Type N-Channel MOSFET, 46 A, 650 V N, 4-Pin TO-247 NTH4L060N090SC1
- RS Stock No.:
- 229-6463
- Mfr. Part No.:
- NTH4L060N090SC1
- Brand:
- onsemi
Subtotal (1 unit)*
Kr.129 04
(exc. VAT)
Kr.161 30
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 228 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 + | Kr. 129,04 |
*price indicative
- RS Stock No.:
- 229-6463
- Mfr. Part No.:
- NTH4L060N090SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SiC Power | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 84mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Power Dissipation Pd | 221W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.9V | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SiC Power | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 84mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Power Dissipation Pd 221W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.9V | ||
Maximum Operating Temperature 175°C | ||
Height 22.74mm | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Width 5.2 mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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