Infineon IPTG Type N-Channel MOSFET, 77 A, 250 V Enhancement, 8-Pin HSOG

View all MOSFETs

Subtotal (1 reel of 1800 units)*

Kr.66 025 80 

(exc. VAT)

Kr.82 531 80 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1 800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1800 +Kr. 36,681Kr. 66 025,80

*price indicative

RS Stock No.:
233-4390
Mfr. Part No.:
IPTG210N25NM3FDATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

77A

Maximum Drain Source Voltage Vds

250V

Series

IPTG

Package Type

HSOG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

175°C

Length

10.1mm

Standards/Approvals

No

Height

2.4mm

Width

8.75 mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG210N25NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 250 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

Related links