Infineon ISC Type N-Channel MOSFET, 170 A, 40 V, 8-Pin TDSON-8 FL ISC019N04NM5ATMA1

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Subtotal (1 reel of 5000 units)*

Kr.24 985 00 

(exc. VAT)

Kr.31 230 00 

(inc. VAT)

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5000 +Kr. 4,997Kr. 24 985,00

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RS Stock No.:
234-6996
Mfr. Part No.:
ISC019N04NM5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

40V

Package Type

TDSON-8 FL

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Typical Gate Charge Qg @ Vgs

67nC

Maximum Power Dissipation Pd

115W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

1.1 mm

Length

4.4mm

Height

3.8mm

Automotive Standard

No

The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 170A continuous drain current. This product offers a Benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the Peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.

Battery powered application

LV motor drives

Very low on-resistanceRDS(on)

100% avalanche tested

175°C junction temperature

Superior thermal resistance

Low gate charge

Reduced switching losses

Suitable for operation at higher frequencies

N-channel

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

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