Renesas Electronics Type N-Channel MOSFET, 25 A, 60 V Enhancement, 4-Pin SOT-669 RJK0651DPB-00#J5

Subtotal (1 reel of 2500 units)*

Kr.21 027 50 

(exc. VAT)

Kr.26 285 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 8,411Kr. 21 027,50

*price indicative

RS Stock No.:
234-7154
Mfr. Part No.:
RJK0651DPB-00#J5
Brand:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-669

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

45W

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 60 V. It is capable of 4.5 V gate drive.

High speed switching

Low drive current

High density mounting

Low on-resistance

Pb-free

Halogen-free

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