Infineon CoolMOS Type N-Channel MOSFET, 19 A, 700 V N, 3-Pin TO-263 IPB65R125CFD7ATMA1

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Subtotal (1 pack of 2 units)*

Kr.101 81 

(exc. VAT)

Kr.127 262 

(inc. VAT)

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  • Plus 984 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
2 - 8Kr. 50,905Kr. 101,81
10 - 18Kr. 45,705Kr. 91,41
20 - 48Kr. 42,785Kr. 85,57
50 - 98Kr. 39,64Kr. 79,28
100 +Kr. 36,72Kr. 73,44

*price indicative

Packaging Options:
RS Stock No.:
236-3658
Mfr. Part No.:
IPB65R125CFD7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-263

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

N

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 15 A.

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Outstanding light-load efficiency in industrial SMPS applications

Improved full-load efficiency in industrial SMPS applications

Price competitiveness compared to alternative offerings in the market

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