Microchip VP2206 Type P-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92
- RS Stock No.:
- 239-5620
- Mfr. Part No.:
- VP2206N3-G
- Brand:
- Microchip
Subtotal (1 tray of 1000 units)*
Kr.19 356 00
(exc. VAT)
Kr.24 195 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 23. februar 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 1000 + | Kr. 19,356 | Kr. 19 356,00 |
*price indicative
- RS Stock No.:
- 239-5620
- Mfr. Part No.:
- VP2206N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-92 | |
| Series | VP2206 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-92 | ||
Series VP2206 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip VP2206 series are enhancement-mode (normally-off) transistors which utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. These vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
It has a Free from secondary breakdown
It has a Low power drive requirement
It offers an ease of paralleling, low CISS and fast switching speeds
It has high input impedance and high gain with excellent thermal stability
It has an integral source-to-drain diode
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