Vishay TrenchFET Gen IV Type P-Channel MOSFET, 445 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ130EL-T1_GE3
- RS Stock No.:
- 239-8678
- Mfr. Part No.:
- SQJQ130EL-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.95 30
(exc. VAT)
Kr.119 12
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Supply shortage
Due to limitations in the supply chain, stock is being assigned as it becomes available.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 47,65 | Kr. 95,30 |
| 20 - 98 | Kr. 44,73 | Kr. 89,46 |
| 100 - 198 | Kr. 40,44 | Kr. 80,88 |
| 200 - 498 | Kr. 38,095 | Kr. 76,19 |
| 500 + | Kr. 35,75 | Kr. 71,50 |
*price indicative
- RS Stock No.:
- 239-8678
- Mfr. Part No.:
- SQJQ130EL-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 445A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET Gen IV | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00052Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 255W | |
| Maximum Operating Temperature | 125°C | |
| Length | 6.15mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 1.6mm | |
| Width | 4.9 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 445A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET Gen IV | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00052Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 255W | ||
Maximum Operating Temperature 125°C | ||
Length 6.15mm | ||
Standards/Approvals AEC-Q101 | ||
Height 1.6mm | ||
Width 4.9 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQJQ is automotive P-Channel MOSFET which operates at 30 V and 175 °C temperature. This MOSFET used for high power density.
Low resistance
AEC-Q101 qualified
UIS tested
Thin package
Related links
- Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L)
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L)
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ186E-T1_GE3
- Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 Si4425FDY-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SiSS22LDN-T1-GE3