STMicroelectronics STH Type N-Channel MOSFET, 55 A, 30 V Enhancement, 7-Pin HU3PAK

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Subtotal (1 reel of 600 units)*

Kr.35 681 40 

(exc. VAT)

Kr.44 601 60 

(inc. VAT)

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Units
Per unit
Per Reel*
600 +Kr. 59,469Kr. 35 681,40

*price indicative

RS Stock No.:
240-0608
Mfr. Part No.:
STHU32N65DM6AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

30V

Package Type

HU3PAK

Series

STH

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

320W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

52.6nC

Maximum Operating Temperature

150°C

Standards/Approvals

UL

Automotive Standard

AEC-Q101

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

AEC-Q101 qualified

Fast-recovery body diode

Lower RDS(on) x area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely dv/dt ruggedness

Zener-protected

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