Nexperia 2 Type N-Channel MOSFET, 18.2 A, 40 V, 8-Pin LFPAK56D

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Subtotal (1 reel of 1500 units)*

Kr.9 874 50 

(exc. VAT)

Kr.12 343 50 

(inc. VAT)

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Units
Per unit
Per Reel*
1500 +Kr. 6,583Kr. 9 874,50

*price indicative

RS Stock No.:
240-1818
Mfr. Part No.:
BUK9K25-40RAX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18.2A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK56D

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29mΩ

Typical Gate Charge Qg @ Vgs

6.3nC

Maximum Power Dissipation Pd

32W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-15 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Nexperia dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications.

Fully automotive qualified to AEC-Q101 at 175 °C

Repetitive Avalanche rated to 30 °C Tj rise

Tested to 1 Bn avalanche events

LFPAK copper clip package technology

High robustness and reliability

Gull wing leads for high manufacturability and AOI

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